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Patent US7399666 - Atomic layer deposition …The use of atomic layer deposition ... Forming the dielectric structure includes depositing zirconium oxide using atomic layer deposition using precursor ...
Patent US7192892 - Atomic layer deposited …... metal layer by atomic layer deposition form a hafnium oxide ... in insulating layer: ... Atomic layer deposited zirconium silicon oxide ...
Patent US6420279 - Methods of using …Methods of using atomic layer deposition to deposit a high ... Atomic layer deposition of hafnium ... Lanthanide oxide/zirconium oxide atomic layer deposited ...
Brevetto US7498242 - Plasma pre-treating …... self-saturating atomic layer deposition ... Plasma pre-treating surfaces for atomic layer deposition ... ZrO 2, hafnium and zirconium silicates, ...
Brevetto US7199023 - Atomic layer …Atomic layer deposited HfSiON dielectric films wherein each ... Atomic layer deposited zirconium ... oxide and hafnium oxide using atomic layer deposition:
Patent US7135421 - Atomic layer-deposited …A gate dielectric is formed by atomic layer deposition employing a hafnium ... "Atomic Layer Deposition of Zirconium ... 3 Insulating Layer for ...
Patent US8084808 - Zirconium silicon oxide …The zirconium silicon oxide film may be formed by atomic layer deposition. The zirconium ... insulating layer having an atomic ... Atomic layer deposited hafnium ...
Systems and methods for forming zirconium …... a zirconium and/or hafnium-containing layer ... using a vapor deposition ... and R″ are each independently an organic group and M is zirconium or hafnium. ...
Atomic layer deposited ZrAlxOy dielectric …An atomic layer deposited ZrAlxOy dielectric ... Zirconium and/or hafnium ... "Atomic layer Deposition of Zirconium Titanium Oxide from Titanium ...
Patent US20080220618 - Zirconium silicon …The zirconium silicon oxide film may be formed by atomic layer deposition. ... including an insulating layer having a zirconium ... forming zirconium and/or hafnium ...
Patent US8084370 - Hafnium tantalum …The hafnium tantalum oxynitride film may be formed using atomic layer deposition. ... metals include hafnium, yttrium, zirconium, ... an insulating nitride layer.
Patent US20040144980 - Atomic layer …Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium ...
www.google.com.arElectronic apparatus and methods of forming the electronic apparatus include a HfSiON film on a substrate for use in a variety of electronic systems. The HfSiON film ...
Patent US7863667 - Zirconium titanium …... titanium and zirconium by atomic layer deposition includes ... in insulating layer: ... Deposition of hafnium oxide and/or zirconium oxide and ...
Patent US7508648 - Atomic layer deposition …The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (HfO 2) doped with dysprosium (Dy) and a method of fabricating such a combination ...
US6551893B1 - Atomic layer deposition of …A capacitor structure is formed over a semiconductor substrate by atomic layer deposition ... insulating layer though an atomic ... hafnium oxide and zirconium ...
Plasma-Assisted Atomic Layer Deposition of …... Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for ... Hafnium Nitride Using Tetrakis(ethylmethylamino…
Patent US7563730 - Hafnium lanthanide …To form hafnium nitride by atomic layer deposition, a hafnium-containing precursor ... 1305-N include an insulating nitride layer. ... Zirconium and/or hafnium ...
Patent US7700989 - Hafnium titanium oxide …... including an insulating layer having a hafnium titanium ... Atomic layer deposition ... Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate ...
Patent US20060043504 - Atomic layer …A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple ... Genus , Inc. Vertically ... Atomic layer deposition of ...
Patent US7192824 - Lanthanide oxide / …Forming a layer of hafnium oxide by atomic layer deposition and forming a ... in which a insulating layer is ... "Atomic Layer Deposition of Zirconium-Doped ...
Systems and methods for forming zirconium …... a zirconium and/or hafnium-containing layer on a ... “Atomic layer deposition” ... Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate ...Patent US20060128168 - Atomic layer …Atomic layer deposited dielectric layers containing a lanthanum hafnium oxide layer and methods of fabricating such dielectric layers provide an insulating layer in a ...
Systems and methods for forming zirconium …... a zirconium and/or hafnium-containing layer on a ... a substrate in a vapor deposition process. The zirconium, hafnium, ... “Atomic layer deposition” ...WhatsApp)
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